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FCB20N60 - N-Channel MOSFET

Datasheet Summary

Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Features

  • 650 V @TJ = 150 °C.
  • Typ. RDS(on) = 150 m.
  • Ultra Low Gate Charge (Typ. Qg = 75 nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 165 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Datasheet Details

Part number FCB20N60
Manufacturer Fairchild Semiconductor
File Size 368.55 KB
Description N-Channel MOSFET
Datasheet download datasheet FCB20N60 Datasheet
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FCB20N60 — N-Channel SuperFET® MOSFET FCB20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features • 650 V @TJ = 150 °C • Typ. RDS(on) = 150 m • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 165 pF) • 100% Avalanche Tested • RoHS Compliant Application • Lighting • Solar Inverter • AC-DC Power Supply October 2013 Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
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