Datasheet4U Logo Datasheet4U.com

FCB20N60 - N-Channel MOSFET

General Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Key Features

  • 650 V @TJ = 150 °C.
  • Typ. RDS(on) = 150 m.
  • Ultra Low Gate Charge (Typ. Qg = 75 nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 165 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FCB20N60F-F085 N-Channel MOSFET ON Semiconductor
FCB260N65S3 N-Channel MOSFET ON Semiconductor
FCB290N80 N-Channel MOSFET INCHANGE
FCB-MA130 USB 3.0 Interface InterTest
FCB-MA130 13 Mega Pixels Digital Camera Module Sony

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FCB20N60F N-Channel MOSFET
FCB20N60_F085 MOSFET
FCB290N80 MOSFET
FCB110N65F MOSFET
FCB11N60 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCB20N60 — N-Channel SuperFET® MOSFET FCB20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features • 650 V @TJ = 150 °C • Typ. RDS(on) = 150 m • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 165 pF) • 100% Avalanche Tested • RoHS Compliant Application • Lighting • Solar Inverter • AC-DC Power Supply October 2013 Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.