FCB20N60 Datasheet | Fairchild Semiconductor

- N-Channel SuperFET® MOSFET N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features - 650 V @TJ = 150 °C - Typ. RDS(on) = 150 m - Ultra Low Gate Charge (Typ. Qg = 75 nC) - Low Effective Output Capacitance (Typ. Coss.eff = 165 pF) - 100% Avalanche Tested - RoHS pliant Application - Lighting - Solar Inverter - AC-DC Power Supply October 2013 Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching...