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FCD2250N80Z - MOSFET

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • RDS(on) = 1.8 Typ. ).
  • Ultra Low Gate Charge (Typ. Qg = 11 nC).
  • Low Eoss (Typ. 1.1 uJ @ 400V).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 51 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD Improved Capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCD2250N80Z — N-Channel SuperFET® II MOSFET December 2014 FCD2250N80Z N-Channel SuperFET® II MOSFET 800 V, 2.6 A, 2.25  Features • RDS(on) = 1.8 Typ.) • Ultra Low Gate Charge (Typ. Qg = 11 nC) • Low Eoss (Typ. 1.1 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.