Datasheet Summary
- N-Channel SuperFET® II MOSFET
December 2014
N-Channel SuperFET® II MOSFET
800 V, 2.6 A, 2.25 Features
- RDS(on) = 1.8 Typ.)
- Ultra Low Gate Charge (Typ. Qg = 11 nC)
- Low Eoss (Typ. 1.1 uJ @ 400V)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF)
- 100% Avalanche Tested
- RoHS pliant
- ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching...
