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FCD2250N80Z - N-Channel MOSFET

Key Features

  • With TO-252(DPAK) packaging.
  • UIS capability.
  • High speed switching.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCD2250N80Z ·FEATURES ·With TO-252(DPAK) packaging ·UIS capability ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·AD-AC power supply ·LED lighting ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 2.6 1.7 6.