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FCH070N60E - N-Channel MOSFET

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 58 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 128 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 457 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCH070N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCH070N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 52 A, 70 mΩ April 2015 Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg = 128 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 457 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.