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FCH070N60E - N-Channel MOSFET

Datasheet Summary

Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • Typ. RDS(on) = 58 mW.
  • 650 V @ TJ = 150°C.
  • Ultra Low Gate Charge (Typ. Qg = 128 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 457 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FCH070N60E
Manufacturer ON Semiconductor
File Size 449.83 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH070N60E Datasheet
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MOSFET – N-Channel, SUPERFET) II, Easy-Drive 600 V, 52 A, 70 mW FCH070N60E Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET easy−drive series offers slightly slower rise and fall times compared to the SUPERFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier design implementation.
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