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FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET
FCH190N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 20.6 A, 190 mΩ
December 2014
Features
• 700 V @ TJ = 150°C • Typ. RDS(on) = 168 mΩ • Ultra Low Gate Charge (Typ. Qg = 60 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) • 100% Avalanche Tested • RoHS Compliant
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.