Datasheet4U Logo Datasheet4U.com

FCH76N60N - MOSFET

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

  • RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A.
  • Ultra Low Gate Charge (Typ. Qg = 218 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 914 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FCH76N60N

Datasheet Details

Part number FCH76N60N
Manufacturer Fairchild Semiconductor
File Size 573.06 KB
Description MOSFET
Datasheet download datasheet FCH76N60N Datasheet
Additional preview pages of the FCH76N60N datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FCH76N60N — N-Channel SupreMOS® MOSFET FCH76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ November 2013 Features • RDS(on) = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 218 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
Published: |