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FCH76N60NF - MOSFET

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

  • RDS(on) = 28.7 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A.
  • Ultra Low Gate Charge (Typ. Qg = 230 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 896 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Datasheet Details

Part number FCH76N60NF
Manufacturer Fairchild Semiconductor
File Size 576.28 KB
Description MOSFET
Datasheet download datasheet FCH76N60NF Datasheet
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FCH76N60NF — N-Channel SupreMOS® FRFET® MOSFET FCH76N60NF N-Channel SupreMOS® FRFET® MOSFET 600 V, 72.8 A, 38 mΩ November 2013 Features • RDS(on) = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 230 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 896 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
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