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FCMT199N60 - N-Channel SuperFET II MOSFET

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • RDS(on) = 170 mΩ (Typ. ).
  • Ultra Low Gate Charge (Typ. Qg = 57 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 160 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCMT199N60 — N-Channel SuperFET® II MOSFET August 2014 FCMT199N60 N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features • 650 V @ TJ = 150°C • RDS(on) = 170 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Server and Telecom Power Supplies • Solar Inverters • Adaptors Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.