FCMT299N60 Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the...
FCMT299N60 Key Features
- 650 V @ TJ = 150°C
- RDS(on) = 250 mΩ (Typ.)
- Ultra Low Gate Charge (Typ. Qg = 39 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
- 100% Avalanche Tested
- RoHS pliant