Description
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
Features
- 650V @Tj = 150°C.
- Typ. Rds(on)=0.32Ω.
- Ultra low gate charge (typ. Qg=40nC).
- Low effective output capacitance (typ. Coss. eff=95pF).
- 100% avalanche tested.
- RoHS Compliant
D
GDS
TO-220
GDS TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche.
FCP11N60 Datasheet
