FCP11N60N Overview
Key Specifications
Package: TO-220
Mount Type: Through Hole
Pins: 3
Height: 15.9 mm
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
Key Features
- RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A
- Ultra Low Gate Charge (Typ. Qg = 27.4 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF)
- 100% Avalanche Tested
- RoHS Compliant
