| Part Number | FCP11N60N Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ.
* RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A * Ultra Low Gate Charge (Typ. Qg = 27.4 nC) * Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF) * 100% Avalanche Tested * RoHS Compliant Application * LCD/LED/PDP TV * Lighting * Solar Inverter * AC-DC Power Supply Description The SupreMO. |
FCP11N60N Datasheet and Specifications PDF
The FCP11N60N is a N-Channel MOSFET.
Key Specifications
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 15.9 mm |
| Length | 10.16 mm |
| Width | 4.7 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FCP11N60N Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot va.
*With TO-220 packaging *High speed switching *Low gate input resistance *Standard level gate drive *Easy to use *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Power supply *Switching applications *ABSOLUTE MAXIMUM RATINGS(T. |