FCP25N60N Datasheet | Fairchild Semiconductor

- N-Channel SupreMOS® MOSFET N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ November 2013 Features - RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A - Ultra Low Gate Charge (Typ. Qg = 57 nC) - Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) - 100% Avalanche Tested - RoHS pliant Application - Solar Inverter - AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching...