Datasheet4U Logo Datasheet4U.com

FCPF650N80Z - MOSFET

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • RDS(on) = 530 mΩ (Typ. ).
  • Ultra Low Gate Charge (Typ. Qg = 27 nC).
  • Low Eoss (Typ. 2.8 uJ @ 400V).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 124 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD Improved Capability.

📥 Download Datasheet

Datasheet preview – FCPF650N80Z

Datasheet Details

Part number FCPF650N80Z
Manufacturer Fairchild Semiconductor
File Size 655.14 KB
Description MOSFET
Datasheet download datasheet FCPF650N80Z Datasheet
Additional preview pages of the FCPF650N80Z datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FCPF650N80Z — N-Channel SuperFET® II MOSFET August 2015 FCPF650N80Z N-Channel SuperFET® II MOSFET 800 V, 10 A, 650 mΩ Features • RDS(on) = 530 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 27 nC) • Low Eoss (Typ. 2.8 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
Published: |