Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
D
G D S
TO-3PN
G S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD T
Features
- RDS(on) = 2.5 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A.
- Fast Switching Speed.
- Low Gate Charge.
- High Performance Trench Technology for Extremely Low RDS(on).
- High Power and Current Handling Capability.
- RoHS Compliant.
FDA032N08 Datasheet
