Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
PDP application
D
G G DS
TO-3PN
S
MOSFET Maximum Ratings
S
Features
- RDS(on) = 29.2mΩ @VGS = 10 V, ID = 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant
UltraFET
tm.
FDA2712 Datasheet
