Datasheet Summary
FDA2712 N-Channel UltraFET Trench MOSFET
April 2007
N-Channel UltraFET Trench MOSFET
250V, 64A, 34mΩ Features
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- - RDS(on) = 29.2mΩ @VGS = 10 V, ID = 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS pliant
UltraFET tm
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications
- PDP application
G G DS
TO-3PN
MOSFET Maximum Ratings
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL...