FDA2712 - N-Channel UltraFET Trench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDA2712
Manufacturer	Fairchild Semiconductor
File Size	375.62 KB
Description	N-Channel UltraFET Trench MOSFET
Datasheet	FDA2712 Datasheet
Additional preview pages of the FDA2712 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. PDP application D G G DS TO-3PN S MOSFET Maximum Ratings Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Diss

Features

RDS(on) = 29.2mΩ @VGS = 10 V, ID = 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant UltraFET tm.

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Published: Jan 29, 2014 |