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FDA79N15 150V N-Channel MOSFET
UniFET
FDA79N15
150V N-Channel MOSFET Features
• 79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V • Low gate charge ( typical 56 nC) • Low Crss ( typical 96 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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FDA79N15 Datasheet
