FDB050AN06A0 - N-Channel MOSFET

Datasheet Summary

Features

r DS(ON) = 4.3mΩ (Typ. ), V GS = 10V, ID = 80A.
Qg(tot) = 61nC (Typ. ), VGS = 10V.
Low Miller Charge.
Low QRR Body Diode.
UIS Capability (Single Pulse and Repetitive Pulse).
Qualified to AEC Q101 Formerly developmental type 82575.

Fairchild Semiconductor

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Datasheet Details

Part number	FDB050AN06A0
Manufacturer	Fairchild Semiconductor
File Size	564.02 KB
Description	N-Channel MOSFET
Datasheet	FDB050AN06A0 Datasheet
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Full PDF Text Transcription

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FDB050AN06A0 / FDP050AN06A0 February 2003 FDB050AN06A0 / FDP050AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ Features • r DS(ON) = 4.3mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 61nC (Typ.

Published: Mar 30, 2005 |