FDB050AN06A0 - N-Channel MOSFET

onsemi

Key Features

RDS(on) = 4.3 mΩ ( Typ. ) @ VGS = 10 V, ID = 80 A.
QG(tot) = 61 nC ( Typ. ) @ VGS = 10 V.
Low Miller Charge.
Low Qrr Body Diode.
UIS Capability (Single Pulse and Repetitive Pulse).

FDB050AN06A0 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDB050AN06A0
Manufacturer	onsemi
File Size	0.97 MB
Description	N-Channel MOSFET
Datasheet	FDB050AN06A0 Datasheet

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Full PDF Text Transcription (Reference)

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FDP050AN06A0 / FDB050AN06A0 — N-Channel PowerTrench® MOSFET FDP050AN06A0 / FDB050AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 5 mΩ Features • RDS(on) = 4.3 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • QG(tot) = 61 nC ( Typ.