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FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET
March 2015
FDP075N15A / FDB075N15A
N-Channel PowerTrench® MOSFET
150 V, 130 A, 7.5 m
Features
• RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A • Fast Switching
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.