FDB075N15A Description
This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
FDB075N15A Key Features
- RDS(on) = 6.25 mW (Typ.) @ VGS = 10 V, ID = 100 A
- Fast Switching
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- RoHS pliant
FDB075N15A Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit