FDB10AN06A0 - N-Channel MOSFET

Fairchild (now onsemi)

Key Features

r DS(ON) = 9.5mΩ (Typ. ), V GS = 10V, ID = 75A.
Qg(tot) = 28nC (Typ. ), VGS = 10V.
Low Miller Charge.
Low Qrr Body Diode.
UIS Capability (Single Pulse and Repetitive Pulse).
Qualified to AEC Q101 Formerly developmental type 82560.

FDB10AN06A0 n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDB10AN06A0
Manufacturer	Fairchild (now onsemi)
File Size	265.23 KB
Description	N-Channel MOSFET
Datasheet	FDB10AN06A0 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB10AN06A0 / FDP10AN06A0 July 2002 FDB10AN06A0 / FDP10AN06A0 N-Channel PowerTrench® MOSFET 60V, 75A, 10.5mΩ Features • r DS(ON) = 9.5mΩ (Typ.), V GS = 10V, ID = 75A • Qg(tot) = 28nC (Typ.