FDB12N50F Datasheet | Fairchild Semiconductor

FDB12N50F N-Channel MOSFET November 2007 N-Channel MOSFET, FRFET 500V, 11.5A, 0.7Ω Features - RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A - Low gate charge ( Typ. 21nC) - Low Crss ( Typ. 11pF) - Fast switching - 100% avalanche tested - Improve dv/dt capability - RoHS pliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high...