FDB12N50F Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switching mode power supplies and...
FDB12N50F Key Features
- RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A
- Low gate charge ( Typ. 21nC)
- Low Crss ( Typ. 11pF)
- Fast switching
- 100% avalanche tested
- Improve dv/dt capability
- RoHS pliant
- Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC)
- Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3)
- Drain current limited by maximum junction temperature
