FDB12N50F - N-Channel MOSFET

onsemi

General Description

UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

RDS(on) = 590 m (Typ. ) @ VGS = 10 V, ID = 6 A.
Low Gate Charge (Typ. 21 nC).
Low Crss (Typ. 11 pF).
100% Avalanche Tested.
Improve dv/dt Capability.
RoHS Compliant.

📥 Download Datasheet

FDB12N50F n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDB12N50F
Manufacturer	onsemi
File Size	776.86 KB
Description	N-Channel MOSFET
Datasheet	FDB12N50F Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FDB12N50F	N-Channel MOSFET	Fairchild Semiconductor
FDB12N50TM	N-Channel MOSFET	Fairchild Semiconductor
FDB12N50U	N-Channel MOSFET	Fairchild Semiconductor
FDB120N10	N-Channel MOSFET Transistor	Inchange Semiconductor
FDB120N10	N-Channel MOSFET	Fairchild Semiconductor

Other Datasheets by onsemi

Part Number	Description
FDB1D7N10CL7	100V 268A N-Channel Shielded Gate MOSFET
FDB035AN06A0	N-Channel MOSFET
FDB035N10A	N-Channel MOSFET
FDB045AN08A0	N-Channel MOSFET
FDB045AN08A0-F085	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FDB12N50F — N-Channel UniFETTM FRFET® MOSFET FDB12N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 11.5 A, 700 m Features • RDS(on) = 590 m (Typ.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 21 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested • Improve dv/dt Capability • RoHS Compliant Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control.