FDB12N50F Description
UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control.
FDB12N50F Key Features
- RDS(on) = 590 m (Typ.) @ VGS = 10 V, ID = 6 A
- Low Gate Charge (Typ. 21 nC)
- Low Crss (Typ. 11 pF)
- 100% Avalanche Tested
- Improve dv/dt Capability
- RoHS pliant