FDB12N50U Datasheet | Fairchild Semiconductor

FDB12N50U N-Channel MOSFET March 2008 N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features - RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A - Low gate charge ( Typ. 21nC) - Low Crss ( Typ. 11pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability - RoHS pliant Ultra FRFET tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high...