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FDB2532 - N-Channel MOSFET

Key Features

  • r DS(ON) = 14mΩ (Typ. ), VGS = 10V, ID = 33A.
  • Qg(tot) = 82nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 82884.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB2532 / FDP2532 / FDI2532 August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features • r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 82nC (Typ.