Fairchild Semiconductor FDB2532
N-Channel MOSFET
| Part No. | FDB2532 |
|---|---|
| Datasheet | FDB2532 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A● Qg(tot) = 82nC (Typ.), VGS = 10V
● Low Miller Charge
● Low QRR Body Diode
● UIS Capability (Single Pulse and Repetitive Pulse)
● Qualified to AEC Q101 Formerly developmental type 82884
APPLICATIONS
● DC/DC converters and Off-Line UPS● Distributed Power Architectures and VRMs
● Primary Switch for 24V and 48V Systems
● High Voltage Synchronous Rectifier
● Direct Injection / Diesel Injection Systems
● 42V Automotive Load Control
● Electronic Valve Train Systems D DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE GATE DRAIN (FLANGE) SOURCE DRAIN GATE G TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) TO-262AB FDI SERIES S MOSFET
MAXIMUM RATINGS
TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, R θJA = 43oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy...
