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FDB2532-F085 - N-Channel MOSFET

Key Features

  • RDS(ON) = 14 mW (Typ. ), VGS = 10 V, ID = 33 A.
  • Qg (tot) = 82 nC (Typ. ), VGS = 10 V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 150 V, 79 A, 16 mW FDB2532-F085 Features • RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A • Qg (tot) = 82 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • DC/DC converters and Off−Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24 V and 48 V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42 V Automotive Load Control • Electronic Valve Train Systems • Synchronous Rectification DATA SHEET www.onsemi.