FDB2532-F085 Overview
MOSFET N-Channel, POWERTRENCH) 150 V, 79 A, 16 mW FDB2532-F085.
FDB2532-F085 Key Features
- RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A
- Qg (tot) = 82 nC (Typ.), VGS = 10 V
- Low Miller Charge
- Low QRR Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant