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FDB2532_F085 - N-Channel MOSFET

Key Features

  • rDS(ON) = 14mΩ (Typ. ), VGS = 10V, ID = 33A.
  • Qg(tot) = 82nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101.
  • RoHS Compliant Formerly developmental type 82884 September 2010.

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FDB2532_F085 N-Channel PowerTrench® MOSFET FDB2532_F085 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 82nC (Typ.