FDB33N25 Overview
May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power...
FDB33N25 Key Features
- 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
- Low gate charge ( typical 36.8 nC)
- Low Crss ( typical 39 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
