FDB33N25 Datasheet PDF (N-Channel MOSFET) | Download ON Semiconductor FDB33N25

FDB33N25 - N-Channel MOSFET

Description

based on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

RDS(on) = 94 mW (Max. ) @ VGS = 10 V, ID = 16.5 A.
Low Gate Charge (Typ. 36.8 nC).
Low Crss (Typ. 39 pF).
100% Avalanche Tested.
These Devices are Pb.
Free and are RoHS Compliant.

Datasheet Details

Part number	FDB33N25
Manufacturer	ON Semiconductor
File Size	253.60 KB
Description	N-Channel MOSFET
Datasheet	FDB33N25 Datasheet
Additional preview pages of the FDB33N25 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, UniFETt 250 V, 33 A, 94 mW FDB33N25 Description UniFETt MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 94 mW (Max.) @ VGS = 10 V, ID = 16.5 A • Low Gate Charge (Typ. 36.8 nC) • Low Crss (Typ. 39 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC−DC Power Supply DATA SHEET www.onsemi.

Published: Dec 20, 2023 |