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FDB4020P - P-Channel MOSFET

General Description

This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs.

Key Features

  • -16 A, -20 V. RDS(on) = 0.08 Ω @ VGS = -4.5 V RDS(on) = 0.11 Ω @ VGS = -2.5 V.
  • Critical DC electrical parameters specified at elevated temperature.
  • High density cell design for extremely low RDS(on).
  • TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP4020P February 1999 PRELIMINARY FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel. Features • -16 A, -20 V. RDS(on) = 0.08 Ω @ VGS = -4.5 V RDS(on) = 0.11 Ω @ VGS = -2.5 V. • Critical DC electrical parameters specified at elevated temperature. • High density cell design for extremely low RDS(on). • TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.