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FDB8160_F085 - N-Channel MOSFET

Key Features

  • Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A.
  • Typ Qg(10) = 187nC at VGS = 10V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB8160_F085 N-Channel PowerTrench® MOSFET FDB8160_F085 N-Channel PowerTrench® MOSFET 30V, 80A, 1.8mΩ October 2010 Features „ Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 187nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ 12V Automotive Load Control „ Starter/Alternator Systems „ Electronic Power Steering Systems „ DC/DC converter TO-263AB FDB SERIES ©2010 Fairchild Semiconductor Corporation FDB8160_F085 Rev. C 1 www.fairchildsemi.