FDB8445
FDB8445 is N-Channel MOSFET manufactured by Fairchild Semiconductor.
Features
- Typ r DS(on) = 6.8mΩ at VGS = 10V, ID = 70A
- Typ Qg(10) = 44n C at VGS = 10V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse/ Repetitive Pulse)
- Qualified to AEC Q101
- Ro HS pliant
Applications
- Automotive Engine Control
- Powertrain Management
- Solenoid and Motor Drivers
- Electronic Transmission
- Distributed Power Architecture and VRMs
- Primary Switch for 12V Systems
AD FREE I
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN (FLANGE)
©2006 Fairchild Semiconductor Corporation
FDB8445 Rev A1 (W)
.fairchildsemi.
FDB8445 N-Channel Power Trench® MOSFET
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V)
Pulsed
(Note 1)
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25o C
(Note...
