FDB8447L Datasheet | Fairchild Semiconductor

FDB8447L 40V N-Channel PowerTrench® MOSFET February 2007 FDB8447L 40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.5mΩ Features General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. - Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A - Max rDS(on) = 11mΩ at VGS = 4.5V, ID = 11A - Fast Switching - RoHS pliant Application - Inverter - Power Supplies D D G G S TO-263AB FDB Series .. S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25°C (Note 1a) (Note 3) TC= 25°C TC= 25°C TA= 25°C (Note 1) (Note 1a) Ratings 40 ±20 50 66 15 100 153 60 3.1 - 55 to +150 mJ W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 2.1 40 °C/W Package Marking and Ordering Information Device Marking FDB8447L Device FDB8447L Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units ©2007 Fairchild Semiconductor Corporation FDB8447L Rev.C 1 .fairchildsemi....