Datasheet Details
| Part number | FDB8447L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 378.58 KB |
| Description | N-Channel PowerTrench MOSFET |
| Datasheet |
 FDB8447L Datasheet
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| Part number | FDB8447L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 378.58 KB |
| Description | N-Channel PowerTrench MOSFET |
| Datasheet |
FDB8447L Datasheet
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This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A Max rDS(on) = 11mΩ at VGS = 4.5V, ID = 11A Fast Switching RoHS Compliant Application Inverter Power Supplies D D G G S TO-263AB FDB Series www.DataSheet4U.com S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25°C (Note 1a) (Note 3) TC= 25°C TC= 25°C TA= 25°C (Note 1) (Note 1a) Ratings 40 ±20 50 66 15 100 153 60 3.1 –55 to +150 mJ W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 2.1 40 °C/W Package Marking and Ordering Information Device Marking FDB8447L Device FDB8447L Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units ©2007 Fairchild Semiconductor Corporation FDB8447L Rev.C 1 www.fairchildsemi.com FDB8447L 40V N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 32V, VGS = 0V VGS = ±20V, VGS = 0V 40 35 1 ±100 V mV/°C µA nA On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to
FDB8447L 40V N-Channel PowerTrench® MOSFET February 2007 FDB8447L 40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.
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