FDB8453LZ - N-Channel PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDB8453LZ
Manufacturer	Fairchild Semiconductor
File Size	269.80 KB
Description	N-Channel PowerTrench MOSFET
Datasheet	FDB8453LZ Datasheet
Additional preview pages of the FDB8453LZ datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. Inverter Power Supplies D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current

Features

Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A.
Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A.
HBM ESD protection level of 7.6kV typical (note 4).
Fast Switching.
RoHS Compliant August 2007 tm General.

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Published: Sep 26, 2018 |