FDB8453LZ Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications Inverter Power Supplies D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain...
FDB8453LZ Key Features
- Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A
- Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A
- HBM ESD protection level of 7.6kV typical (note 4)
- Fast Switching
- RoHS pliant