FDB86366_F085 - MOSFET

Fairchild (now onsemi)

Key Features

Typical RDS(on) = 2.8 mΩ at VGS = 10V, ID = 80 A.
Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A.
UIS Capability.
RoHS Compliant.
Qualified to AEC Q101.

FDB86366_F085 mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDB86366_F085
Manufacturer	Fairchild (now onsemi)
File Size	387.44 KB
Description	MOSFET
Datasheet	FDB86366_F085 Datasheet

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Full PDF Text Transcription (Reference)

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FDB86366_F085 N-Channel PowerTrench® MOSFET FDB86366_F085 N-Channel PowerTrench® MOSFET 80 V, 110 A, 3.6 mΩ December 2014 Features Typical RDS(on) = 2.8 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12V Systems DD GS TO-263 FDB SERIES G S For current package drawing, please refer to the Fairchild web‐ site at https://www.fairchildsemi.com/package‐drawings/TO/ TO263A02.pdf MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.