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FDB86366-F085 - N-Channel Power MOSFET

Datasheet Summary

Features

  • Typical RDS(on) = 2.8 mΩ at VGS = 10V, ID = 80 A.
  • Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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Datasheet Details

Part number FDB86366-F085
Manufacturer ON Semiconductor
File Size 453.67 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FDB86366-F085 Datasheet
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FDB86366-F085 N-Channel PowerTrench® MOSFET FDB86366-F085 N-Channel PowerTrench® MOSFET 80 V, 110 A, 3.6 mΩ Features „ Typical RDS(on) = 2.8 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems D D G GS TO-263 S FDB SERIES MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
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