FDB86566-F085 - N-Channel Power MOSFET

onsemi

Key Features

Typical RDS(on) = 2.2 mΩ at VGS = 10V, ID = 80 A.
Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 A.
UIS Capability.
RoHS Compliant.
Qualified to AEC Q101.

FDB86566-F085 n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDB86566-F085
Manufacturer	onsemi
File Size	443.75 KB
Description	N-Channel Power MOSFET
Datasheet	FDB86566-F085 Datasheet

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Full PDF Text Transcription (Reference)

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FDB86566-F085 N-Channel PowerTrench® MOSFET FDB86566-F085 D N-Channel PowerTrench® MOSFET 60 V, 110 A, 2.7 mΩ Features Typical RDS(on) = 2.2 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12V Systems GS TO-263 FDB SERIES MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.