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FDB86566-F085 - N-Channel Power MOSFET

Datasheet Summary

Features

  • Typical RDS(on) = 2.2 mΩ at VGS = 10V, ID = 80 A.
  • Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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Datasheet Details

Part number FDB86566-F085
Manufacturer ON Semiconductor
File Size 443.75 KB
Description N-Channel Power MOSFET
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FDB86566-F085 N-Channel PowerTrench® MOSFET FDB86566-F085 D N-Channel PowerTrench® MOSFET 60 V, 110 A, 2.7 mΩ Features „ Typical RDS(on) = 2.2 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems GS TO-263 FDB SERIES MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
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