FDB86566-F085 Overview
Key Features
- Typical RDS(on) = 2.2 mΩ at VGS = 10V, ID = 80 A
- Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 A
- UIS Capability
- RoHS Compliant
- Qualified to AEC Q101
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |