FDB8860_F085
FDB8860_F085 is N-Channel Logic Level PowerTrench MOSFET manufactured by Fairchild Semiconductor.
FDB8860_F085 N-Channel Logic Level Power Trench® MOSFET
June 2010
N-Channel Logic Level Power Trench® MOSFET
30V, 80A, 2.6m:
Features
- RDS(ON) = 1.9m: (Typ), VGS = 5V, ID = 80A
- Qg(5) = 89n C (Typ), VGS = 5V
- Low Miller Charge
- Low QRR Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
- Ro HS pliant
Applications
- 12V Automotive Load Control
- Start / Alternator Systems
- Electronic Power Steering Systems
- ABS
- DC-DC Converters
©2010 Fairchild Semiconductor Corporation FDB8860_F085 Rev A
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FDB8860_F085 N-Channel Logic Level Power Trench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (VGS = 10V, TC < 163o C) Continuous (VGS = 5V, TC < 162o C) Continuous (VGS = 10V, TC = 25o C, with RTJA = 43o C/W) Pulsed
EAS Single Pulse Avalanche Energy (Note1) Power Dissipation
PD Derate above 25o C
TJ, TSTG Operating and Storage...
