FDB8874 Datasheet | Fairchild Semiconductor

November 2004 N-Channel Power Trench® MOSFET 30V, 121A, 4.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Features - r DS(ON) = 4.7mΩ , VGS = 10V, ID = 40A - r DS(ON) = 6.0mΩ , VGS = 4.5V, ID = 40A - High performance trench technology for extremely low r DS(ON) - Low gate charge Applications - DC/DC converters - High power and current handling capability GATE SOURCE DRAIN (FLANGE) TO-263AB FDB SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) (Note 1) ID Continuous (TC = 25o C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25o C, VGS = 10V, with Rθ JA = 43o C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25o C Operating and Storage Temperature 121 107 21 Figure 4 105 110 0.73 -55 to 175 A A A A m J W W/o C o C Ratings 30 ±20 Units V V Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 ( Note 3) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.36 62 43 o o C/W C/W o C/W Package Marking and Ordering Information Device Marking FDB8874 FDB8874 ©2004 Fairchild Semiconductor Corporation Device FDB8874 FDB8874_NL (Note 4) Package TO-263AB TO-263AB Reel Size 330mm 330mm Tape Width 24mm...