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FDB8874 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Key Features

  • rDS(ON) = 4.7mΩ , VGS = 10V, ID = 40A.
  • rDS(ON) = 6.0mΩ , VGS = 4.5V, ID = 40A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB8874 November 2004 FDB8874 N-Channel PowerTrench® MOSFET 30V, 121A, 4.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features • rDS(ON) = 4.7mΩ , VGS = 10V, ID = 40A • rDS(ON) = 6.0mΩ , VGS = 4.