FDBL0240N100
FDBL0240N100 is 100V 210A N-Channel MOSFET manufactured by Fairchild Semiconductor.
FDBL0240N100 N-Channel Power Trench® MOSFET
FDBL0240N100 N-Channel Power Trench® MOSFET
100 V, 210 A, 2.8 mΩ
Features
- Max RDS(on) = 2.8 mΩ at VGS = 10 V, ID = 80 A
- Max Qg(tot) = 111 n C at VGS = 10 V, ID = 80 A
- UIS Capability
- Ro HS pliant
Applications
- Industrial Motor Drive
- Industrial Power Supply
- Industrial Automation
- Battery Operated tools
- Battery Protection
- Solar Inverters
- UPS and Energy Inverters
- Energy Storage
- Load Switch
November 2015
S SSS S SS G BOTTOM
MO-299A
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol VDS VGS
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25°C TC = 100°C
Single Pulse Avalanche...
