FDC5612 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features - 4.3 A, 60 V. RDS(ON) = 0.055 W - - - - @ VGS = 10 V RDS(ON) = 0.064 W @ VGS = 6 V. Low gate charge (12.5n C typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Super SOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Super SOTTM -6 3 4 TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed Parameter Ratings 60 ±20 (Note 1a) Units V V A W °C 4.3 20 1.6 0.8 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W Package Outlines and Ordering Information Device Marking .612 Device Reel Size 7’’ Tape...