FDC5612 - 60V N-Channel PowerTrenchTM MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC5612
Manufacturer	Fairchild Semiconductor
File Size	244.72 KB
Description	60V N-Channel PowerTrenchTM MOSFET
Datasheet	FDC5612 Datasheet
Additional preview pages of the FDC5612 datasheet.

Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

4.3 A, 60 V. RDS(ON) = 0.055 W.
@ VGS = 10 V RDS(ON) = 0.064 W @ VGS = 6 V. Low gate charge (12.5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S D D 1 6 2 5 G D SuperSOTTM -6 3 4 D TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Ga.

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Published: Mar 30, 2005 |