FDC5612
FDC5612 is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
- 4.3 A, 60 V.
RDS(ON) = 0.055 W @ VGS = 10 V
RDS(ON) = 0.064 W @ VGS = 6 V
- Low Gate Charge (12.5 n C Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON).
- SUPERSOTTM- 6 Package: Small Footprint
(72% Smaller than Standard SO- 8); Low Profile (1mm Thick).
- This is a Pb- Free and Halide Free Device
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain- Source Voltage
Gate- Source Voltage
Drain Current
- Continuous (Note 1a)
- Pulsed
±20
A 4.3
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
- 55 to +150...
