FDC855N Datasheet | Fairchild Semiconductor

FDC855N N-Channel, Logic Level, Power Trench® MOSFET January 2008 Single N-Channel, Logic Level, Power Trench MOSFET 30V, 6.1A, 27mΩ Features - Max r DS(on) = 27mΩ at VGS = 10V, ID = 6.1A - Max r DS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A - Super SOTTM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick). - Ro HS pliant tm ® General Description This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Semiconductor’s advanced Power Trench® process, this device possesses minimized on-state resistance to optimize the power consumption. They are ideal for applications where in-line power loss is critical. Application - Power Management in Notebook, Hard Disk Drive Super SOT TM-6 G D D Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation (Steady State) (Steady State) (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings 30 ±20 6.1 20 1.6 0.8 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 30 78 °C/W Package Marking and Ordering Information Device Marking .855 Device FDC855N Package Super SOT-6 Reel Size 7” Tape Width 8 mm Quantity 3000 units ©2008 Fairchild Semiconductor Corporation FDC855N Rev.C .fairchildsemi. FDC855N N-Channel, Logic Level, Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C...