FDC8878 Datasheet | Fairchild Semiconductor

FDC8878 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 30 V, 8.0 A, 16 mΩ April 2015 Features General Description - Max r DS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A - Max r DS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A - High performance trench technology for extremely low r DS(on) - Fast switching speed - Ro HS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for r DS(on), switching performance. Applications - Primary Switch Pin 1 Super SOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous TA = 25 °C -Pulsed Power Dissipation Power...