FDD1600N10ALZ Overview
Description
This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.
Key Features
- RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A
- RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 A
- Low Gate Charge (Typ.2.78 nC)
- Low Crss (Typ. 2.04 pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS Compliant
