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FDD2582 - MOSFET

Key Features

  • rDS(ON) = 58mΩ (Typ. ), VGS = 10V, ID = 7A.
  • Qg(tot) = 19nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 82855 March 2015.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD2582 FDD2582 N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ Features • rDS(ON) = 58mΩ (Typ.), VGS = 10V, ID = 7A • Qg(tot) = 19nC (Typ.