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FDD2582
N-Channel 150 V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V) 150
RDS(on) (Ω) 0.074 at VGS = 10 V 0.077 at VGS = 8 V
ID (A)a 25.4 22.5
Qg (Typ.) 23 nC
D TO-252
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Extremely Low Qgd for Switching Losses • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Primary Side Switch
G
GD S
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.
FDD2582 Datasheet
