FDD2582 Datasheet and Specifications PDF

The FDD2582 is a N-Channel MOSFET.

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Part NumberFDD2582 Datasheet
Manufactureronsemi
Overview MOSFET, N-Channel, POWERTRENCH) 150 V, 21 A, 66 mW FDD2582 Features  rDS(ON) = 58 mW (Typ.), VGS = 10 V, ID = 7 A  Qg(tot) = 19 nC (Typ.), VGS = 10 V  Low Miller Charge  Low QRR Body Diode  UIS C.
* rDS(ON) = 58 mW (Typ.), VGS = 10 V, ID = 7 A
* Qg(tot) = 19 nC (Typ.), VGS = 10 V
* Low Miller Charge
* Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* These Devices are Pb
*Free, Halide Free and are RoHS Compliant Applications
* DC/DC Converters and Off
*Line UPS
* Distrib.
Part NumberFDD2582 Datasheet
DescriptionMOSFET
ManufacturerFairchild Semiconductor
Overview FDD2582 FDD2582 N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ Features • rDS(ON) = 58mΩ (Typ.), VGS = 10V, ID = 7A • Qg(tot) = 19nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Ca.
* rDS(ON) = 58mΩ (Typ.), VGS = 10V, ID = 7A
* Qg(tot) = 19nC (Typ.), VGS = 10V
* Low Miller Charge
* Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101 Formerly developmental type 82855 March 2015 Applications
* DC/DC converters and Off-Line UPS
* Distri.
Part NumberFDD2582 Datasheet
DescriptionN-Channel 150V MOSFET
ManufacturerVBsemi
Overview FDD2582 N-Channel 150 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) 0.074 at VGS = 10 V 0.077 at VGS = 8 V ID (A)a 25.4 22.5 Qg (Typ.) 23 nC D TO-252 FEATURES • Halogen.
* Halogen-free According to IEC 61249-2-21 Definition
* Extremely Low Qgd for Switching Losses
* 100 % Rg Tested
* 100 % Avalanche Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise n.